Plasma enhanced chemical vapor deposition is a process used for the deposition of thin films of materials.  Plasma is used to enhance the chemical reaction processes and thus, PECVD can typically be done at lower temperatures than conventional CVD.

PECVD systems include a power supply, match generator, electrodes, and vacuum system to create an RF signal (often at 13.6 MHz).

Silicon oxide is usually deposited using silane, SiH4, and nitrous oxide, N2O.  Nitride is typically deposited using silane and ammonia, NH3.